The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

@article{Park2007TheEO,
  title={The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells},
  author={Moo Suk Park and Kangdeog Suh and Keonsoo Kim and S. Hur and Kisook Kim and W J Lee},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={750-752}
}
We present this letter on the combining effect of tunnel-oxide degradation and narrow width effect on the data retention characteristics of NAND flash memory cells. Due to severe boron segregation in shallow-trench isolation (STI) corner, the cell transistor suffers from intense VTH shift on STI corner in data retention mode. Independent of enhancing the tunnel-oxide quality, the data retention characteristics are improved by designing a cell transistor that isolates the region where Fowler… CONTINUE READING
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