The Effect of Doping Concentration of Si on the Nature of Barrier of Co $_{2}$MnSi/MgO/n-Si Junctions

Abstract

In this work, we have presented the electrical characteristic of CoMnSi/MgO/n-Si junctions as a function of the doping concentration of Si. Films were fabricated by dc sputtering and post annealed at 400°C for 1 h without breaking the vacuum. The CoMnSi/MgO/n-Si junctions exhibited diode like characteristics at low doping concentration 1016/cc. This can be… (More)

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