The Design of an Operational Amplifier Using Silicon Carbide JFETs

@article{Maralani2012TheDO,
  title={The Design of an Operational Amplifier Using Silicon Carbide JFETs},
  author={Ayden Maralani and Michael S. Mazzola},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2012},
  volume={59},
  pages={255-265}
}
Superior performance of the Silicon Carbide (SiC) semiconductor in high temperature and harsh environment is widely known. However, utilizing the Vertical Channel 4H-SiC JFET (SiC JFET) for analog design exhibits significant design challenges, even at room temperature. The fundamental challenges are low intrinsic gain, the limitation of the Gate to Source Voltage Range (GSVR), and restrictions on utilizing Channel Length (CL) as a design parameter due to fabrication complexity. These challenges… CONTINUE READING

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