The Design Aspects for Ultra Low-Power, Low-Noise 90 nm CMOS Charge Sensitive Amplifier for the Active Pixel Detector

Abstract

A falling particle in the digital registration systems for elementary particles active pixel detector induces electric charge, the value of which describes the parameters of the particle in the detector. Since the electric charge induced by a single particle is relatively weak, the detector signal is first processed (amplified and shaped) right in the zone of irradiation and only then transmitted further. This paper analyses the primary analogical registration electronics for digital registration systems for elementary particles active pixel detectors, which is charge sensitive amplifiers operating in the nanoampere region.

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Cite this paper

@inproceedings{Barzdenas2009TheDA, title={The Design Aspects for Ultra Low-Power, Low-Noise 90 nm CMOS Charge Sensitive Amplifier for the Active Pixel Detector}, author={Vaidotas Barzdenas and Romualdas Navickas}, year={2009} }