The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

@article{Lutz2016TheDS,
  title={The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors},
  author={Gerhard Lutz and Matteo Porro and Stefan Aschauer and Stefan W{\"o}lfel and Lothar Str{\"u}der},
  journal={Sensors},
  year={2016},
  volume={16 5}
}
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 20 REFERENCES

Multi correlated double sampling with exponential reset

  • 2007 IEEE Nuclear Science Symposium Conference Record
  • 2007
VIEW 5 EXCERPTS
HIGHLY INFLUENTIAL

New semiconductor detector concepts

J. Kemmer, G. Lutz
  • Nucl. Instr. Meth. A
  • 1987
VIEW 4 EXCERPTS
HIGHLY INFLUENTIAL

Halbleiterdetektor Mit Einem Zwischenspeicher für Signalladungsträger und Entsprechendes Betriebsverfahren

G. Lutz
  • DE Patent 102011115656 A1,
  • 2013
VIEW 3 EXCERPTS

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