The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal

@article{Raman2010TheDC,
  title={The DARPA COSMOS program: The convergence of InP and Silicon CMOS technologies for high-performance mixed-signal},
  author={Sanjay Raman and Tsu-Hsi Chang and Carl L. Dohrman and Mark J. Rosker},
  journal={2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)},
  year={2010},
  pages={1-5}
}
The COmpound Semiconductor Materials On Silicon (COSMOS) program of the U.S. Defense Advanced Research Projects Agency (DARPA) focuses on developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices with high-density silicon circuits. The technical approaches being explored in this program include high-density micro assembly, monolithic epitaxial growth, and epitaxial layer printing processes. In Phase I of the program… CONTINUE READING
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A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

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