The Combination of STEM Tomography and STEM / EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries

@inproceedings{Fu2016TheCO,
  title={The Combination of STEM Tomography and STEM / EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries},
  author={Bianzhu Fu and M. Gribelyuk and Laurent Dumas and Cheng Fang and N. LaManque and Lucy Hodgkins and Elston Chen},
  year={2016}
}
Self-aligned nickel(platinum) silicidation process has been used in several semiconductor technology nodes to reduce source, drain, and gate resistance in metal-oxide-semiconductor (MOS) devices [1]. Formation of metal contacts to silicide regions is prone to defect formation. Residues on the Si surface prior to silicidation lead to blocked NiSi formation… CONTINUE READING