The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

@article{Rahimo2009TheBI,
  title={The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications},
  author={Munaf Rahimo and Arnost Kopta and Ulrich Schlapbach and Jan Vobeck{\'y} and Raffael Schnell and Sven Klaka},
  journal={2009 21st International Symposium on Power Semiconductor Devices & IC's},
  year={2009},
  pages={283-286}
}
In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented. The new technology is referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes. The… CONTINUE READING

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