The Analysis of Dielectric Breakdown in Cu/Low-k Interconnect System

Abstract

Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC… (More)

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@article{Hwang2006TheAO, title={The Analysis of Dielectric Breakdown in Cu/Low-k Interconnect System}, author={Nam Hwang and Tam Lyn Tan and Cheng Kuo Cheng and An Yan Du and Chee Lip Gan and Dim Lee Kwong}, journal={2006 European Solid-State Device Research Conference}, year={2006}, pages={399-402} }