The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review

@article{Kroemer2004The6,
  title={The 6.1 {\AA} family (InAs, GaSb, AlSb) and its heterostructures: a selective review},
  author={Herbert Kroemer},
  journal={Physica E-low-dimensional Systems \& Nanostructures},
  year={2004},
  volume={20},
  pages={196-203}
}
  • H. Kroemer
  • Published 2004
  • Materials Science
  • Physica E-low-dimensional Systems & Nanostructures
View via Publisher
ece.ucsb.edu
270 Citations
Highly Influential Citations
5
Background Citations
50
Methods Citations
2
Results Citations
1

Figures from this paper

270 Citations

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well (QW) grown by MOVPE on an n-InAs (100) substrate is investigated in quantizing magnetic fields up to…
Defect investigations in InAs/GaSb type-II strained layer superlattice
InAs/GaSb type-II strained layer superlattices are a material used for infrared detection. By adjusting the thickness of the InAs and GaSb layers, the material bandgap can be tuned to absorb photons…
Effect of antimony segregation on the electronic properties of InAs/InAsSb superlattices
There has been great progress in recent years in advancing the state-of-the-art of Ga-free InAs/InAsSb superlattice (SL) materials for infrared detector applications, spurred by the observation of…
MBE growth and characterization of InAs/GaSb core/shell nanowire arrays
III-V semiconductor compounds InAs and GaSb are almost lattice matched and when in contact, the heterostructure appears to have a broken gap alignment at their interface[1]. In a core/shell nanowire…
High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
Interfaces in complex InAs-GaSb heterostructured nanowires - A transmission electron microscopy study
In this project epitaxially grown InAs-GaSb complex heterostructured nanowires have been characterized by means of aberration corrected TEM techniques and energy dispersive X-ray spectroscopy (EDX).…
Fermi level tuning and band alignment in Mn-doped InAs/GaSb
InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized…
Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices
We present the design, growth, fabrication, and characterization of unipolar barrier photodiodes, pBiBn, based on type-II InAs/GaSb superlattice for midwave and longwave infrared detection. Design…
Gating of high-mobility InAs metamorphic heterostructures
We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In0.75Ga0.25As often show signs of…
...
...

References

SHOWING 1-10 OF 92 REFERENCES
Electrical properties and band offsets of InAs/AlSb n‐N isotype heterojunctions grown on GaAs
The MBE growth and selected properties of InAs/AlSb n‐N isotype heterojunctions on n+‐GaAs substrates are described. Because of a large conduction‐band offset (1.35 eV), these junctions behave like…
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
A series of five short‐period (InAs)6/(AlSb)6 superlattices, grown either with AlAs‐like, InSb‐like, or alternating interfaces, were studied by means of x‐ray diffraction, high resolution…
Characterization of GaSb/InAs type II infrared detectors at very long wavelengths: Carrier scattering at defect clusters
Band parameters for III–V compound semiconductors and their alloys
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP,…
Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
We present data on the electron concentrations and mobilities in deep (≊1.3 eV) AlSb/InAs/AlSb quantum wells grown by molecular‐beam epitaxy. High electron sheet concentrations of the order 1012…
Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations
Low-temperature mobilities in InAs-AlSb quantum wells depend sensitively on the buffer layer structures. Reflection high energy electron diffraction and x-ray diffraction show that the highest…
Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
The InAs/Ga1−xInxSb strained‐layer superlattice (SLS) holds promise as an alternative III–V semiconductor system for long wavelength infrared detectors. In this article, we present the first…
Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
Data are presented on the role of the InAs/AlSb interface in determining the electron transport in AlSb/InAs/AlSb quantum wells grown by molecular‐beam epitaxy. Because both anion and cation change…
Buffer-dependent mobility and morphology of InAs(Al,Ga)Sb quantum wells
An AlSb–InAs–AlSb double‐heterojunction P‐n‐P bipolar transistor
We report the experimental demonstration of AlSb–InAs P‐n‐P double‐heterojunction bipolar transistors. The devices exhibited net current gain and supported a substantial collector voltage of VCE≳2.5…
...
...