The 3T-CID cell, a memory cell for high-density dynamic RAM's

Abstract

An experimental and theoretical study of the three-terminal charge-injection device (3T-CID) operating as dynamic memory cell has been made. An optimized cell needs only about 60 percent of silicon surface compared to a classical single-transistor cell having the same storage capacitor. Several experimental arrays with minimum linewidth and spacing of 8 µm… (More)

12 Figures and Tables

Topics

  • Presentations referencing similar topics