The 3-D Stacking Bipolar RRAM for High Density

@article{Chen2012The3S,
  title={The 3-D Stacking Bipolar RRAM for High Density},
  author={Yi-Chung Chen and Hai Li and Wei Zhang and Robinson E. Pino},
  journal={IEEE Transactions on Nanotechnology},
  year={2012},
  volume={11},
  pages={948-956}
}
For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material to prevent signal interference between the adjacent memory layers. The process of the isolation… CONTINUE READING
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