The 1/f Noise in a Two-Dimensional Electron Gas: Temperature and Electric Field Considerations

Abstract

The principal operation of semiconductor devices is based on the motion of carriers in the conduction and valence bands. The presence of defects and impurities causes damages and large fluctuations in the electric conductivity via fluctuations in the carrier density [1] or in their mobility [3], or in the both [3–5]. For this reason, the control and the… (More)

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Cite this paper

@inproceedings{ELEKTROTECHNIKA2009The1N, title={The 1/f Noise in a Two-Dimensional Electron Gas: Temperature and Electric Field Considerations}, author={ELEKTRONIKA IR ELEKTROTECHNIKA and Souheil Mouetsi and A. El Hdiy and M. Bouchemat}, year={2009} }