Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

@article{Ott2018TetrahedralAC,
  title={Tetrahedral amorphous carbon resistive memories with graphene-based electrodes},
  author={Anna K. Ott and Chunmeng Dou and U. Sassi and Ilya Goykhman and Duhee Yoon and J. Wu and Antonio Lombardo and Andrea C. Ferrari},
  journal={2D Materials},
  year={2018},
  volume={5}
}
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios  ∼, ten times higher than with metal electrodes, with no increase in switching power, and low power density  ∼14 μW μm−2. We attribute this to a… 
5 Citations

Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes

Recent advances in resistive switching devices have garnered a considerable amount of interest as an alternative option for next‐generation nonvolatile memories due to their distinct advantages of

Unifying the optical and electrical properties of amorphous carbon: application to hopping photoconductivity and memristance

Amorphous carbon films with an intermediate content of sp3 atoms are finding applications as resistive switches in devices for bio-sensing and for neuromorphic pattern recognition. To understand

Memristors, Spintronics and 2D Materials for Future Computing Systems

This perspective article discusses three technologies that will likely play an essential role in future computing systems: memristive electronics, spintronics, and electronics based on 2D materials and speculate how these could fit within future digital, quantum and neuromorphic systems.

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

Three approaches that will likely play an essential role in future computing systems are discussed: memristive electronics, spintronics, and electronics based on 2D materials, and how these technologies may transform conventional digital computers and contribute to the adoption of new paradigms, like neuromorphic computing.

Decade of 2D-materials-based RRAM devices: a review

Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed, less power losses, lower threshold voltage, long retention time, high electrical endurance and extended mechanical robustness.

References

SHOWING 1-10 OF 82 REFERENCES

Oxygenated amorphous carbon for resistive memory applications.

An oxygenated amorphous carbon produced by physical vapour deposition that has several properties in common with graphite oxide is presented, suggesting that a-COx could play a key role in non-volatile memory technology and carbon-based electronics.

Graphene and Related Materials for Resistive Random Access Memories

Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs). Here, this emerging field is analyzed, classified, and evaluated, and

Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances such as high on/off-resistance ratio (>;

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

This work provides an overview of the current understanding of bipolar-switching RRAM operation, reliability and scaling, and the stability of the low- and high-resistance states will be discussed in terms of conductance fluctuations and evolution in 1D filaments containing only a few atoms.

Carbon Memory Assessment

This paper will introduce into the diverse field of carbon materials by recollecting some effects in carbon that can be used to produce a multiple time switchable, non-volatile unipolar resistive memory with potential high scalability down to atomic dimensions.

Emerging memories: resistive switching mechanisms and current status

The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element

Graphene transfer was repeated several times in order to further improve the conductance of the electrodes, therefore forming a multilayer graphene (MLG) stack, which exhibited conventional bipolar resistive switching characteristics similar to the results obtained with metal electrodes.
...