Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

  title={Tetrahedral amorphous carbon resistive memories with graphene-based electrodes},
  author={Anna K. Ott and Chunmeng Dou and Ugo Sassi and Ilya Goykhman and Duhee Yoon and J. Wu and Antonio Lombardo and Andrea C. Ferrari},
  journal={2D Materials},
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios  ∼, ten times higher than with metal electrodes, with no increase in switching power, and low power density  ∼14 μW μm−2. We attribute this to a… 
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