Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

@article{Wu2010Tetragonal,
  title={Tetragonal \$\hbox\{ZrO\}_\{2\}/\hbox\{Al\}_\{2\}\hbox\{O\}_\{3\}\$  Stack as High-\$\kappa\$ Gate Dielectric for Si-Based MOS Devices},
  author={Yung-Hsien Wu and Lun-Lun Chen and Rong-Jhe Lyu and Ming-yen Li and Hsiao-Che Wu},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={1014-1016}
}
Abstract-The combination of tetragonal ZrO<sub>2</sub> (t-ZrO<sub>2</sub>) and amorphous Al<sub>2</sub>O<sub>3</sub> was explored as the gate dielectric for Si-based MOS devices. Because of the absence of a ZrSiO<sub>4</sub> and/or ZrSi interfacial layer, the thermally stable t-ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/Si stack is more eligible than the Al<sub>2</sub>O<sub>3</sub>/t-ZrO<sub>2</sub>/Si stack for the gate dielectric since it demonstrates larger capacitance, smaller hysteresis… CONTINUE READING

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