Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

  title={Tetragonal \$\hbox\{ZrO\}_\{2\}/\hbox\{Al\}_\{2\}\hbox\{O\}_\{3\}\$  Stack as High-\$\kappa\$ Gate Dielectric for Si-Based MOS Devices},
  author={Yung-Hsien Wu and Lun-Lun Chen and Rong-Jhe Lyu and Ming-yen Li and Hsiao-Che Wu},
  journal={IEEE Electron Device Letters},
Abstract-The combination of tetragonal ZrO<sub>2</sub> (t-ZrO<sub>2</sub>) and amorphous Al<sub>2</sub>O<sub>3</sub> was explored as the gate dielectric for Si-based MOS devices. Because of the absence of a ZrSiO<sub>4</sub> and/or ZrSi interfacial layer, the thermally stable t-ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/Si stack is more eligible than the Al<sub>2</sub>O<sub>3</sub>/t-ZrO<sub>2</sub>/Si stack for the gate dielectric since it demonstrates larger capacitance, smaller hysteresis… CONTINUE READING


Publications referenced by this paper.
Showing 1-10 of 18 references

Hafnium zirconate gate dielectric for advanced gate stack applications

R. I. Hegde, D. H. Triyoso, S. B. Samavedam, B. E. White, Jr.
J. Appl. Phys., vol. 101, no. 7, p. 074113, Apr. 2007. • 2007
View 11 Excerpts
Highly Influenced

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

B. H. Lee, L. Kang, R. Nieh, W. J. Qi, J. C. Lee
Appl. Phys. Lett., vol. 76, no. 14, pp. 1926–1928, Apr. 2000. • 1926
View 9 Excerpts
Highly Influenced

Thermodynamic stability of high-k dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

M. Gutowskia, J. E. Jaffe, +4 authors P. J. Tobin
Appl. Phys. Lett., vol. 80, no. 11, pp. 1897–1899, Mar. 2002. • 1897
View 5 Excerpts
Highly Influenced

Electronic band structure of zirconia and hafnia polymorphs from the GW perspective

H. Jiang, R. I. Gomez-Abal, P. Rinke, M. Scheffler
Phys. Rev. B, Condens. Matter, vol. 81, no. 8, p. 085119, Feb. 2010. • 2010
View 1 Excerpt

Hafnium zirconate gate dielectric for advanced gate stack applications Maximizing performance for higher k gate dielectrics

D. H. Triyoso R. I. Hegde, S. B. Samavedam, B. E. White
J . Appl . Phys . • 2008

High density metal-insulator-metal capacitor based on ZrO2/Al2O3/ZrO2 laminate dielectric

Y. H. Wu, C. K. Kao, +3 authors H. C. Wu
Appl. Phys. Lett., vol. 93, no. 3, p. 033511, Jul. 2008. • 2008
View 2 Excerpts

Maximizing performance for higher k gate dielectrics

J. Robertson
J. Appl. Phys., vol. 104, no. 12, p. 124 111, Dec. 2008. • 2008
View 1 Excerpt

Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer

R. Katamreddy, R. Inman, G. Jursich, A. Soulet, C. Takoudis
Appl. Phys. Lett., vol. 89, no. 26, p. 262 906, Dec. 2006. • 2006
View 1 Excerpt

Dielectric constant enhancement due to Si incorporation into HfO2

K. Tomida, K. Kita, A. Toriumi
Appl. Phys. Lett., vol. 89, no. 14, p. 142 902, Oct. 2006. • 2006
View 3 Excerpts

Similar Papers

Loading similar papers…