Tetracene air-gap single-crystal field-effect transistors

@inproceedings{Xia2007TetraceneAS,
  title={Tetracene air-gap single-crystal field-effect transistors},
  author={Yu Xia and Vivek Kalihari and C. Daniel Frisbie and Nam Kwon Oh and John A Rogers},
  year={2007}
}
The authors report the fabrication and characterization of tetracene single-crystal field-effect transistors FETs utilizing an air or vacuum gap as the gate dielectric. The linear mobility of the device can be as high as 1.6 cm2/V s in air, with a subthreshold slope lower than 0.5 V nF/decade cm2. By changing the orientation of the same crystal on the air-gap substrate, surface charge transport along different crystallographic directions was measured. There is pronounced anisotropy in the… CONTINUE READING

Figures, Tables, and Topics from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 12 CITATIONS

Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

  • 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)
  • 2014
VIEW 2 EXCERPTS

References

Publications referenced by this paper.
SHOWING 1-10 OF 19 REFERENCES

Adv. Mater. ͑Weinheim, Ger.͒

E Menard, V Podzorov, +3 authors J A Rogers
  • Adv. Mater. ͑Weinheim, Ger.͒
  • 2003

Science

M E Someya, J A Gershenson, Rogers
  • Science
  • 2002

Adv. Mater. ͑Weinheim, Ger

A Menard, V Marchenko, +3 authors Rogers
  • Adv. Mater. ͑Weinheim, Ger

Adv. Mater. ͑Weinheim, Ger.͒

A Da Silva Filho, E.-G Kim, J.-L Bredas
  • Adv. Mater. ͑Weinheim, Ger.͒

Appl. Phys. Lett

T Takahashi, T Takenobu, J Takeya, Y Iwasa
  • Appl. Phys. Lett

Appl. Phys. Lett

A F Stassen, R W I De Boer, N N Iosad, A F Morpurgo
  • Appl. Phys. Lett

Appl. Phys. Lett

W I De Boer, T M Klapwijk, A F Morpurgo
  • Appl. Phys. Lett

Appl. Phys. Lett

R Newman, R J Chesterfield, J A Merlo, C D Frisbie
  • Appl. Phys. Lett

J. Appl. Phys

C Goldmann, C Krellner, +3 authors B Batlogg
  • J. Appl. Phys

Similar Papers

Loading similar papers…