Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode

@article{Tsiligiannis2013TestingAC,
  title={Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode},
  author={Georgios Tsiligiannis and Luigi Dilillo and Alberto Bosio and Patrick Girard and Aida Todri and Arnaud Virazel and S. S. McClure and A. D. Touboul and Frederic Wrobel and Fr{\'e}d{\'e}ric Saign{\'e}},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={2617-2622}
}
Academic and industrial research interest in terrestrial radiation effects of electronic devices has expanded over the last years from avionics and military applications to commercial applications as well. At the same time, the need for faster and more reliable memories has given growth to new memory technologies such as Magnetic (magneto-resistive) Random Access Memories (MRAM), a promising new non-volatile memory technology that will probably replace in the future the current SRAM and FLASH… CONTINUE READING
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