Test Structure for Characterization of Low-Frequency Noise in CMOS Technologies

@article{Wei2010TestSF,
  title={Test Structure for Characterization of Low-Frequency Noise in CMOS Technologies},
  author={Chengqing Wei and Yong-Zhong Xiong and Xing Zhou},
  journal={IEEE Transactions on Instrumentation and Measurement},
  year={2010},
  volume={59},
  pages={1860-1865}
}
This paper describes an alternative way of driving the complementary metal-oxide-semiconductor (CMOS) device into different drain-current levels for low-frequency-noise (LFN) characterization. A floating-gate (FG) test structure that constructs the characterized MOSFET with an extra control gate is proposed. A metal-insulator-metal (MIM) capacitor is used to construct this control gate. Instead of applying different input-dc-bias supplies for the gate terminals of the MOSFETs, the device is… CONTINUE READING

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