Terahertz responsivity of field-effect transistors under arbitrary biasing conditions

@inproceedings{Fldesy2013TerahertzRO,
  title={Terahertz responsivity of field-effect transistors under arbitrary biasing conditions},
  author={P{\'e}ter F{\"o}ldesy},
  year={2013}
}
Current biased photoresponse model of long channel field-effect transistor (FET) detectors is introduced to describe the low frequency behavior in complex circuit environment. The model is applicable in all FET working regions, including subthreshold, linear, saturated modes, includes bulk potential variations, and handles the simultaneous gate-source and drain-source detection or source-driven topologies. The model is based on the phenomenological representation that links the photoresponse to… CONTINUE READING
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