Terahertz pulse generation from bulk GaAs by a tilted-pulse-front excitation at 1.8 μm

@inproceedings{Blanchard2014TerahertzPG,
  title={Terahertz pulse generation from bulk GaAs by a tilted-pulse-front excitation at 1.8 μm},
  author={François Blanchard and Bruno Eugen Schmidt and Xavier Ropagnol and Nicolas Thir{\'e} and Tsuneyuki Ozaki and Roberto Morandotti and David G Cooke and François L{\'e}gar{\'e}},
  year={2014}
}
We report on terahertz (THz) generation via optical rectification in a room temperature gallium arsenide (GaAs) crystal pumped at a wavelength of 1.8 μm using a modified tilted-pulse-front scheme, leading to a 0.05% energy conversion efficiency. The spectral content of the measured THz pulses, ranging from 0.1 to 3 THz, confirmed a good broadband phase matching between the pump and the THz pulses over several millimeters (>20 mm) in a semi-insulating 〈110〉 cut bulk GaAs crystal. Our findings… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-10 OF 12 CITATIONS

Prospects of Semiconductor Terahertz Pulse Sources

VIEW 6 EXCERPTS
CITES METHODS
HIGHLY INFLUENCED

Measurement of Effective Four-Photon Absorption in Semiconductors

Intense terahertz sources for nonlinear interactions

VIEW 1 EXCERPT
CITES BACKGROUND

Prospects of semiconductor terahertz pulse sources

VIEW 1 EXCERPT
CITES BACKGROUND

Efficient scalable monolithic semiconductor high-energy terahertz pulse source

VIEW 3 EXCERPTS
CITES BACKGROUND & RESULTS

High-energy terahertz pulses from semiconductors pumped above the three-photon absorption edge

VIEW 2 EXCERPTS
CITES METHODS & BACKGROUND