Tenth-micron polysilicon thin-film transistors

@article{Watts1993TenthmicronPT,
  title={Tenth-micron polysilicon thin-film transistors},
  author={R Watts and J.T.C. Lee},
  journal={IEEE Electron Device Letters},
  year={1993},
  volume={14},
  pages={515-517}
}
Small thin-film polysilicon transistors are of interest for load devices in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT's) with gate lengths ranging from 7 to 0.12 mu m made in large-grain polysilicon.<<ETX>>