Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics

@article{Jain2011TensilestrainedGS,
  title={Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics},
  author={Jinendra Raja Jain and Dany-Sebastien Ly-Gagnon and Krishna C. Balram and Justin S. White and Mark L. Brongersma and David A. B. Miller and Roger T. Howe},
  journal={Optical Materials Express},
  year={2011},
  volume={1},
  pages={1121-1126}
}
We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through… 

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