Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics

  title={Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics},
  author={Jinendra Raja Jain and Dany-Sebastien Ly-Gagnon and Krishna C. Balram and Justin S. White and Mark L. Brongersma and David A. B. Miller and Roger T. Howe},
  journal={Optical Materials Express},
We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through… 

Figures from this paper

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission.

Direct band photoluminescence peak significantly shifts to longer wavelength as compared to that from bulk Ge due to a combination of strain-induced band gap reduction and quantum confinement effect.

Strained germanium thin film membrane on silicon substrate for optoelectronics.

This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate and presents the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics

This work presents a novel process to manufacture advanced Germanium-On-Insulator with integrated Silicon Nitride (GOIN) stripes as light waveguide for Ge photonic devices. Through the integration of

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal—oxide—semiconductor transistors and efficient photonic devices. In this paper,

Band-gap engineering of Germanium monolithic light sources using tensile strain and n-type doping

Band-gap engineering of bulk germanium (Ge) holds the potential for realizing a laser source, permitting full integration of monolithic circuitry on CMOS platforms. Techniques rely mainly on tensile

SiN used as a Stressor in Germanium-On-Insulator Substrate

The advantage of using silicon nitride as a stressor in a strained germanium-on-insulator substrate (strained Ge) is shown and the tensile strain is higher than other reported GOI using SiO2 layer.

Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence.

Using time-resolved photoluminescence decay measurement, it is observed that minority carrier lifetimes can be improved by over a factor of 3 as the defective top interface of the material stack is removed.

Towards monolithic integration of germanium light sources on silicon chips

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant

Effect of Substrate Biasing on the Epitaxial Growth and Structural Properties of RF Magnetron Sputtered Germanium Buffer Layer on Silicon

High-quality single-crystal-like Ge (004) thin films have been epitaxially grown using radio-frequency magnetron sputtering on Si (001) substrates successfully. The crystalline quality of the Ge

Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings.

GOI microdisk with circular Bragg grating is a promising optical resonator structure suitable for realizing low threshold, compact Ge lasers integrated on Si substrate, and its surface emission intensity is found to be increased by the grating period.



Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

A promising fabrication method for a Si1−xGex-on-insulator (SGOI) virtual substrate and evaluation of strain in the Si layer on this SGOI substrate are presented. A 9-nm-thick SGOI layer with x=0.56

High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

Ge on insulator (GOI) is desired to obtain metal-oxide-semiconductor transistors with high performance and low leakage current. We have developed a method to make GOI based on liquid-phase epitaxial

Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique

Silicon germanium on insulator (SGOI) is a straightforward material for ultimate device scaling. This substrate combines two advantages: high carrier's velocity of the Si1 - xGex alloy and low

Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

The formation and detailed characterisations of a 200 mm germanium-on-insulator substrate made from germanium bulk material as donor wafer using the Smart Cut TM technology is reported. Detailed

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

A novel fabrication technique for relaxed and thin SiGe layers on buried oxide (BOX) layers, i.e., SiGe on insulator (SGOI), with a high Ge fraction is proposed and demonstrated for application to

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

A rapid melt growth method was developed to produce Ge crystals including Ge pillars, nanowires, and Ge-on-insulator. Amorphous Ge was deposited and patterned, then crystallized by melting and

Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates

We have fabricated and characterized the first resonant cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication

Toward a Germanium Laser for Integrated Silicon Photonics

It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap

Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

We demonstrate a 0.25% tensile strained Ge p-i-n photodetector on Si platform that effectively covers both C and L bands in telecommunications. The direct band edge of the Ge film has been pushed

Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Today, to our knowledge, only two techniques are used to perform GeOI substrates: the Smart-Cut™ technique and the Ge condensation technique. The latter is very sensitive to the initial parameters