Temperature study of high-drive capability buffer for phase change memories

Abstract

Phase Change Memory (PCM) is a non-volatile memory technology with wide programming window and continuously improving data retention performance. In order to drive the variable load PCM exhibits, the amplifier providing programming pulses to the cell must be able to accurately control pulse parameters. In this paper, we present a unity gain buffer capable… (More)

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@article{Kiouseloglou2014TemperatureSO, title={Temperature study of high-drive capability buffer for phase change memories}, author={Athanasios Kiouseloglou and Erika Covi and Gabriele Navarro and Alessandro Cabrini and Luca Perniola and Guido Torelli}, journal={2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, year={2014}, pages={1-4} }