Temperature effects on trench-gate punch-through IGBTs

@article{Santi2004TemperatureEO,
  title={Temperature effects on trench-gate punch-through IGBTs},
  author={Enrico Santi and Xiaosong Kang and Alexandre Caiafa and J. L. Hudgins and P D Palmer and D. Goodwine and Antonello Monti},
  journal={IEEE Transactions on Industry Applications},
  year={2004},
  volume={40},
  pages={472-482}
}
The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate punch-through insulated gate bipolar transistors (IGBTs) are examined over a temperature range of from -50/spl deg/C to 125/spl deg/C. An analytical description of the forward conduction voltage drop is presented based on temperature dependencies of the appropriate physical parameters and mechanisms. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results… CONTINUE READING

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