Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization

@inproceedings{Choi2003TemperatureDO,
  title={Temperature dependence of the growth of super-grain polycrystalline silicon by metal induced crystallization},
  author={Jong Hyun Choi and Do-young Kim and Seong Jin Park and Byoung Kwon Choo and Jin Mi Jang},
  year={2003}
}
Abstract We studied the growth of super-grain polycrystalline silicon by silicide mediated crystallization of amorphous silicon (a-Si) using a pulsed rapid thermal annealing (RTA). The Ni particles of 4.6×10 12 cm −2 were scattered onto the a-Si and then heated at various temperatures in the RTA system. The grain size was found to decrease from 41 to 26 μm with increasing crystallization temperature from 650 to 750 °C. The formation of nuclei and the grain growth rate from the nuclei have been… CONTINUE READING

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