Temperature dependence of switching performance in IGBT circuits and its compact modeling

@article{Miyake2011TemperatureDO,
  title={Temperature dependence of switching performance in IGBT circuits and its compact modeling},
  author={Masataka Miyake and Masaya Ueno and Junichi Nakashima and Hiroki Masuoka and Uwe Feldmann and Hans J{\"u}rgen Mattausch and Mitiko Miura-Mattausch and Takaoki Ogawa and T. Ueta},
  journal={2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs},
  year={2011},
  pages={148-151}
}
We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT, a compact model for power diode including the reverse recovery effect and the model application to accurate prediction of experimental switching characteristics. 

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