Temperature dependence of anisotropic magnetoresistance and atomic rearrangements in ferromagnetic metal break junctions

@inproceedings{Shi2007TemperatureDO,
  title={Temperature dependence of anisotropic magnetoresistance and atomic rearrangements in ferromagnetic metal break junctions},
  author={Sufei Shi and Kirill I. Bolotin and Ferdinand Kuemmeth and Daniel C Ralph},
  year={2007}
}
Recent experiments have found that the anisotropic magnetoresistance AMR of nanometer-scale ferromagnetic contacts at low temperature can be larger than that of bulk samples and can exhibit more complicated variations as a function of sample bias and the angle of an applied magnetic field than in the bulk case. Here, we test a proposal that quantum interference of electrons may explain these results, by measuring the temperature dependence of the AMR signals in nanometer-scale contacts made… CONTINUE READING

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