# Temperature dependence of DC currents in HBT

@article{Wang1992TemperatureDO, title={Temperature dependence of DC currents in HBT}, author={H. Wang and Catherine Algani and Agnieszka Konczykowska and Wlodzimierz M. Zuberek}, journal={1992 IEEE Microwave Symposium Digest MTT-S}, year={1992}, pages={731-734 vol.2} }

A DC thermal-electrical heterojunction bipolar transistor (HBT) model is presented. Only three parameters were needed to simulate completely an HBT with the self-heating effect. It can be very easily implemented in any CAD software which uses the SPICE bipolar junction transistor model. Parameter extraction has been carried out on measured data and good fits were obtained over a wide temperature range. This model can be used to design high-power heterojunction bipolar transistors and circuits…

## 25 Citations

Thermal and reverse base current effects on heterojunction bipolar transistors and circuits

- Engineering, Physics
- 1995

An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the…

Systematic non-linear model parameter extraction for microwave HBT devices

- EngineeringProceedings of 36th Midwest Symposium on Circuits and Systems
- 1993

A complete non-linear SPICE model for the heterojunction bipolar transistor (HBT) is presented. The DC and AC characteristics of the HBT are compared with the Gummel-Poon (GP) model used by…

Analysis of the temperature dependence of current gain in heterojunction bipolar transistors

- Physics
- 1997

An analytical description is developed which highlights the important physical parameters influencing the temperature dependence of the current gain in heterojunction bipolar transistors (HBTs). Each…

Elevated temperature microwave characteristics of heterojunction bipolar transistors

- Physics15th Annual GaAs IC Symposium
- 1993

An analysis of the heterojunction bipolar transistor (HBT) temperature effect has been performed directly at microwave frequencies using a combination of measurements and physical modeling. The most…

GaAs/AlGaAs HBT modeling for microwave circuit applications

- EngineeringSymposium on Antenna Technology and Applied Electromagnetics [ANTEM 1994]
- 1994

This paper describes a model for a GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT). The model is based on the Gummel-Poon topology with modifications to account for self-heating and transit time…

Linear and non-linear modelling verification of power HBTs

- Engineering1994 24th European Microwave Conference
- 1994

A large-signal model for power heterojunction bipolar transistors (HBTs) is described. The proposed modified Gummel-Poon model can accurately predict the DC characteristics, small-signal…

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

- EngineeringIEEE Microwave and Guided Wave Letters
- 1996

Heterojunction bipolar transistors (HBT's) with 2700 μm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results…

A new DC model of HBT's including self-heating effect suitable for circuit simulators

- Physics
- 1995

This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid…

A New DC Model of HBT's Including Effect Suitable for Circuit Simulators

- Physics
- 1995

A new empirical DC model which includes self-heating effects is presented which is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS.

A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter-extraction procedure

- Engineering
- 1995

Accurate modelling of the microwave large-signal characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) is extremely useful for microwave power applications of the device. This…

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