Temperature dependence of DC currents in HBT

  title={Temperature dependence of DC currents in HBT},
  author={H. Wang and Catherine Algani and Agnieszka Konczykowska and Wlodzimierz M. Zuberek},
  journal={1992 IEEE Microwave Symposium Digest MTT-S},
  pages={731-734 vol.2}
A DC thermal-electrical heterojunction bipolar transistor (HBT) model is presented. Only three parameters were needed to simulate completely an HBT with the self-heating effect. It can be very easily implemented in any CAD software which uses the SPICE bipolar junction transistor model. Parameter extraction has been carried out on measured data and good fits were obtained over a wide temperature range. This model can be used to design high-power heterojunction bipolar transistors and circuits… 

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