Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

@article{HacohenGourgy2011TemperatureDO,
  title={Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions},
  author={Shay Hacohen-Gourgy and Itay Diamant and Boaz Almog and Yoni Dubi and Guy Deutscher},
  journal={Applied Physics Letters},
  year={2011},
  volume={99},
  pages={172108}
}
We present the tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang et al., Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150 K, which is four times smaller than the theoretically expected Tc, from the accepted mean field model [T. O. Wehling et al., Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an… 
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