Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

@inproceedings{ToledanoLuque2011TemperatureAV,
  title={Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics},
  author={Maria Toledano-Luque and Ben Kaczer and Eddy Simoen and Ph. J. Roussel and Anabela Veloso and Tibor Grasser and G. Groeseneken},
  year={2011}
}
Quantized threshold voltage (VTH) relaxation transients are observed in nano-scaled field effect transistors (FETs) after bias temperature stress. The abrupt steps are due to trapping/detrapping of individual defects in the gate oxide and indicate their characteristic emission/capture times. Individual traps are studied in n-channel SiO2/HfSiO FETs after positive gate stress to complement previous studies performed on SiO(N). Similarly to single SiO(N) traps, strong thermal and bias dependences… CONTINUE READING
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