# Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

@article{Urban2019TemperatureAG,
title={Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods},
author={Francesca Urban and Grzegorz Lupina and Alessandro Grillo and Nadia Martucciello and Antonio Di Bartolomeo},
journal={arXiv: Applied Physics},
year={2019}
}
• Published 10 December 2019
• Materials Science
• arXiv: Applied Physics
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We…
13 Citations

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