Temperature Sensitivity of 1.54- m Vertical-Cavity Lasers with an InP-Based Bragg Reflector

Abstract

We fabricated 1.54m laser diodes that employ one integrated GaInAsP–InP and one Si–SiO2 mirror in combination with a strain-compensated GaInAsP multiquantum-well active layer. Considerable care has to be taken of the temperature performance of the devices. Here, an important parameter is the gain offset between the gain peak wavelength and the cavity… (More)

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