Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

Abstract

A temperature-dependent RF large-signal model is constructed by modifying the Verilog-A code of the Angelov model for unique characteristics of GaN MOSHFETs. Different from the previously reported EEHEMT-based model, the present electro-thermal model can fit the temperature effects on threshold shift and transconductance degradation, the drain current in… (More)

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Cite this paper

@article{Deng2008TemperatureDependentRL, title={Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs}, author={Jie Deng and Weike Wang and S. Halder and W. R. Curtice and J. Hwang and V.. Adivarahan and M Anwar H Khan}, journal={IEEE Transactions on Microwave Theory and Techniques}, year={2008}, volume={56}, pages={2709-2716} }