Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors

@article{Poli2011TemperatureDO,
  title={Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors},
  author={S. Poli and Susanna Reggiani and Marie Denison and Elena Gnani and Antonio Gnudi and Giorgio Baccarani and Sameer Pendharkar and R. Wise},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={791-793}
}
Large threshold voltage shifts (ΔVt) are experimentally observed in n-channel lateral DMOS transistors under high current-voltage regime. The effect is enhanced by the gate voltage as well as by the ambient temperature (TA) . By approximating the curves with the usually adopted power-law dependence (ΔVt = Atn), two different contributions are observed, and a clear increase of the exponent n is found. A numerical investigation is carried out, revealing that the electric field normal to the oxide… CONTINUE READING
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