• Corpus ID: 208527180

Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors

@article{Alpert2019TemperatureDO,
  title={Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors},
  author={Hannah S. Alpert and Caitlin A. Chapin and Karen M. Dowling and S R Benbrook and Helmut Kock and Udo Ausserlechner and Debbie G. Senesky},
  journal={arXiv: Instrumentation and Detectors},
  year={2019}
}
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature, declining from 53 to 8.3 mV/V/T for the InAlN/GaN sample and from 89 to 8.5 mV/V/T for the AlGaN/GaN sample, corresponding to the decreasing electron mobility due to scattering effects at elevated temperatures. Alternatively, current-scaled sensitivities remained… 

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