• Corpus ID: 208527180

Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors

@article{Alpert2019TemperatureDO,
  title={Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors},
  author={Hannah S. Alpert and Caitlin A. Chapin and Karen M. Dowling and S R Benbrook and Helmut Kock and Udo Ausserlechner and Debbie G. Senesky},
  journal={arXiv: Instrumentation and Detectors},
  year={2019}
}

• H. Alpert, C. Chapin, +4 authors D. Senesky
• Published 2 December 2019
• Materials Science
• arXiv: Instrumentation and Detectors

The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature, declining from 53 to 8.3 mV/V/T for the InAlN/GaN sample and from 89 to 8.5 mV/V/T for the AlGaN/GaN sample, corresponding to the decreasing electron mobility due to scattering effects at elevated temperatures. Alternatively, current-scaled sensitivities remained stable over the temperature range, only varying by 13.1% from the mean of 26.3 V/A/T and 10.5% from the mean of 60.2 V/A/T for the InAlN/GaN and AlGaN/GaN samples respectively. This is due to the minimal temperature dependence of the electron sheet density on the 2-dimensional electron gas (2DEG). Both devices showed consistency in their voltage- and current-scaled sensitivity over multiple temperature cycles as well as nearly full recovery when returned to room temperature after thermal cycling. Additionally, an AlGaN/GaN sample held at 576°C for 12 hours also showed nearly full recovery at room temperature, further suggesting that GaN-based Hall-effect sensors are a good candidate for use in high temperature applications.