Temperature-Dependence of High-Gain Operation in GaAs Photoconductive Semiconductor Switch at 1.6 $\mu \text{J}$ Excitation

Abstract

This letter reports the temperature-dependence of high-gain operation in semi-insulating GaAs photoconductive semiconductor switches at 1.6 μJ laser diode excitation. Under the excitation of two different spot patterns, the electric field threshold for high-gain operation is investigated by varying the temperature. In addition, the switching characteristics… (More)

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