Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

@article{Gadlage2009TemperatureDO,
  title={Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies},
  author={M. J. Gadlage and J. R. Ahlbin and Vishwa Ramachandran and P. M. Gouker and C. A. Dinkins and Bharat L. Bhuva and Balaji Narasimham and R. D. Schrimpf and M. McCurdy and M. L. Alles and R. A. Reed and M. H. Mendenhall and L. W. Massengill and R. L. Shuler and Dale Mcmorrow},
  journal={IEEE Transactions on Nuclear Science},
  year={2009},
  volume={56},
  pages={3115-3121}
}
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.