Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

@inproceedings{Huang2017TemperatureDS,
  title={Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics},
  author={Jack Jia-Sheng Huang and H. Chang and Yu-Heng Jan and Chih Jui Ni and Hsiao-yu Chen and Emin Chou},
  year={2017}
}
Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. In this work, we study the temperature dependence of the breakdown voltage and dark current of the mesa-type APD over a wide temperature range of 20–145C.We institute an empirical model based on impact ionization processes to account for the experimental data… CONTINUE READING

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References

Publications referenced by this paper.
SHOWING 1-10 OF 31 REFERENCES

E

E. Ishimura
  • Yagyu,M.Nakaji et al., “Degradationmode analysis on highly reliable guardring-free planar InAlAs avalanche photodiodes,” Journal of Lightwave Technology, vol. 25, no. 12, pp. 3686–3693
  • 2007
VIEW 2 EXCERPTS
HIGHLY INFLUENTIAL

Temperature dependence of avalanche breakdown in InP and InAlAs,

L.J.J. Tan, D.S.G.Ong, J. S. Ng
  • IEEE Journal of Quantum Electronics,
  • 2010

andD

M. Achouche, G. Glastre, C. Caillaud, M. Lahrichi, M. Chtioui
  • Carpentier, “InGaAs communication photodiodes: from low- to high-power-level designs,” IEEE Photonics Journal, vol. 2, no. 3, pp. 460–468
  • 2010
VIEW 1 EXCERPT

PN and Metal-Semiconductor Junctions

C. Hu
  • chapter 4, EE Class Note, Berkeley, Calif, USA
  • 2009
VIEW 1 EXCERPT

T

T. Takeshita, Y. Hirota
  • Ishibashi et al., “Degradation behavior of avalanche photodiodes with a mesa structure observed using a digital OBICmonitor,” IEEE Transactions on Electron Devices, vol. 53, no. 7, pp. 1567–1574
  • 2006

Temperature dependence of impact ionization in submicrometer silicon devices,

D.J.Massey, J.P.R.David, andG.J. Rees
  • IEEE Transactions on Electron Devices,
  • 2006
VIEW 1 EXCERPT