Technology for Self-Assembled Entities in Logic and Memory Units below the Lithography Limit


Discrete floating gates, nanocrystals or nitride traps, of Flash memory devices enable aggressive scaling of the tunneling oxide by relieving the total charge loss concern of the continuous floating gate [1]. However, a trade-off between the retention and program/erase (P/E) characteristics still remains. Nanocrystal memories with the direct tunneling oxide… (More)


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