Technology development for InSb infrared imagers

@article{Wei1980TechnologyDF,
  title={Technology development for InSb infrared imagers},
  author={Ching-Yeu Wei and K. -M. Wang and E G Taft and J. M. Swab and M J Gibbons and W A Davern and D. M. Brown},
  journal={IEEE Transactions on Electron Devices},
  year={1980},
  volume={27},
  pages={170-175}
}
InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 10<sup>10</sup>cm<sup>-2</sup>. eV<sup>-1</sup>, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of… CONTINUE READING
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