Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory

@article{Park2015TechnologySC,
  title={Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory},
  author={Sung-Kye Park},
  journal={2015 IEEE International Memory Workshop (IMW)},
  year={2015},
  pages={1-4}
}
  • Sung-Kye Park
  • Published 2015 in 2015 IEEE International Memory Workshop (IMW)
Memory manufactures are facing the challenges of technology scaling beyond 1xnm node DRAM and NAND flash memory. Even though we are managing to overcome patterning issue, we are still fighting against cost reduction and electrical limitation. In this paper, the scaling limitations and challenges of both DRAM and NAND are reviewed, and the future prospects with promising solutions are also addressed for high density DRAM and 3D NAND flash memory. 
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