Techniques of evaluating long term oxide reliability at wafer level

  • D P Crook
  • Published 1978 in 1978 International Electron Devices Meeting
This paper discusses techniques of evaluating long term oxide reliability at the wafer level. These techniques are presently used in the development of high reliability oxide processes. The first technique involves a statistical analysis of the electric field distribution of MOS capacitor primary breakdown. The second technique consists of monitoring time… CONTINUE READING