# Techniques for small-signal analysis of semiconductor devices

@article{Laux1985TechniquesFS, title={Techniques for small-signal analysis of semiconductor devices}, author={Steven E. Laux}, journal={IEEE Transactions on Electron Devices}, year={1985}, volume={32}, pages={2028-2037} }

Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state analysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost…

## 187 Citations

An Efficient Technique for the Small-Signal Analysis of Semiconductor Devices

- Engineering1990 20th European Microwave Conference
- 1990

A fast and efficient technique for the small-signal analysis of semiconductor devices from physical simulations is presented, which produces a saving of nearly 50% of computer CPU time over the conventional method.

Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations

- EngineeringMonte Carlo Methods Appl.
- 2004

A particle-based simulation tool is used to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices, regarding the applicability and advantages of both approaches.

Comparison of Algorithms for Frequency Domain Coupled Device and Circuit Simulation

- Computer ScienceIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- 2006

Three algorithmic approaches for the frequency-domain harmonic-balance method in a coupled device and circuit simulator are examined, including the nonquasi- static, quasi-static, and modified Volterra series approaches.

A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices

- EngineeringIEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
- 1993

The authors present a computationally efficient unified approach to the numerical simulation of sensitivity and noise in majority-carrier semiconductor devices that is based on the extension to…

An analytical model for the non-quasi-static small-signal behaviour of submicron MOSFETs

- Engineering
- 1995

Concurrent Efficient Evaluation of Small-Change Parameters and Green’s Functions for TCAD Device Noise and Variability Analysis

- Computer ScienceIEEE Transactions on Electron Devices
- 2017

An efficient numerical approach for the concurrent evaluation of the small-change deterministic device parameters and of the relevant Green’s functions exploited in the simulation of device small-signal, stationary and cyclostationary noise, and variability properties of semiconductor devices through the solution of physics-based models based on a partial-differential equation description of charged carrier transport.

Intrinsic Capacitances Computation Of Semiconductor Multi Electrodes Devices

- Engineering[1987] NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits
- 1987

Steady state simulation of silicon and IU-IZ devices are performed by solving the general set of equation (eventually completed by energy conservation equation. Using finite difference (FD) or finite…

A modified-Volterra-series technique for improving the accuracy of quasi-static harmonic balance analysis in coupled device and circuit simulation

- EngineeringProceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)
- 2004

A modified-Volterra-series (MVS) approach for improving the accuracy of the harmonic balance method in coupled device and circuit simulation significantly improves accuracy over the quasi-static approach for high frequency, small amplitude signals.

TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUIT

- Computer Science
- 1991

A program for numerical simulation of two‐dimensional semiconductor devices coupled with an external circuit using a two‐level Newton method and an efficient bypassing scheme was developed for the linearization scheme, showing a significant speed advantage of the secant method despite its lower rate of convergence.

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