Techniques for small-signal analysis of semiconductor devices

@article{Laux1985TechniquesFS,
  title={Techniques for small-signal analysis of semiconductor devices},
  author={S. Laux},
  journal={IEEE Transactions on Electron Devices},
  year={1985},
  volume={32},
  pages={2028-2037}
}
  • S. Laux
  • Published 1985
  • Computer Science
  • IEEE Transactions on Electron Devices
Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state analysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost… Expand
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References

SHOWING 1-10 OF 17 REFERENCES
Modeling of bipolar device structures - physical simulation
An integral charge control model of bipolar transistors
A charge-oriented model for MOS transistor capacitances
...
1
2
...