Technique for determination of nitrogen concentration in Czochralski silicon by infrared absorption measurement

@inproceedings{Tanahashi2003TechniqueFD,
  title={Technique for determination of nitrogen concentration in Czochralski silicon by infrared absorption measurement},
  author={Katsuto Tanahashi and Hiroshi Yamada-Kaneta},
  year={2003}
}
A new method is proposed for the determination of the nitrogen (N) concentration in Czochralski silicon by infrared absorption measurement. Two specimens for the determination are cut from the same N-doped Czochralski silicon (wafer). They are subjected to isothermal annealing at 600°C and 750°C for 2 h and quenched in air to hold the quasithermal-equilibrium state in the formation-dissociation reaction of N-related defects. The absorption coefficient of the infrared absorption peak in the… CONTINUE READING