Te-doped GaSb crystals grown in ionized hydrogen atmosphere

@inproceedings{Sestkov1997TedopedGC,
  title={Te-doped GaSb crystals grown in ionized hydrogen atmosphere},
  author={V. S˛est{\'a}kov{\'a} and B. S˘tpˇ{\'a}nek and J. S˛est{\'a}k},
  year={1997}
}
GaSb crystals highly doped with tellurium were grown using the Czochralski technique in ionized hydrogen atmosphere. The free-carrier concentration is several times lower than in the case of the use of molecular hydrogen. It has been shown that the ionized atmosphere also acts as a passivator in a wider range of tellurium concentration and that the equilibrium between passivated and active donors is created according to the ratio of p- to n-type dopants in the starting melt.