Tantalum-based diffusion barriers in Si / Cu VLSI metallizations

@inproceedings{Kolawa1999TantalumbasedDB,
  title={Tantalum-based diffusion barriers in Si / Cu VLSI metallizations},
  author={Elizribeth Kolawa and J-S. Chen and Jeffrey S. Reid and P. J. Pokela and M A Nicolet},
  year={1999}
}
We have studied sputter-deposited Ta, Ta s6 ‘t4, and Ta3&ir4N~e thin lilms as diffusion Sr barriers between Cu overlayers and Si substrates. Electrical measurements on Si n +p shallow junction diodes demonstrate that a 180-nm-thick Ta film is not an effective diffusion barrier. For the standard test of 30-min annealing in vacuum applied in the present study, the Ta barrier fails after annealing at 500 “C. An amorphous Ta74Si26 thin film improves the performance by raising the failure… CONTINUE READING
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