TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology

@article{Malou2014TIDAS,
  title={TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology},
  author={Florence Malou and Gilles Gasiot and Remy Chevallier and Laurent Dugoujon and Philippe Roche},
  journal={2014 IEEE Radiation Effects Data Workshop (REDW)},
  year={2014},
  pages={1-8}
}
We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology. 

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A 65nm CMOS Platform for Space Applications: Performance Appraisal on Rad-Hard Microprocessors

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1 Excerpt

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