TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology

@article{Malou2014TIDAS,
  title={TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology},
  author={F. Malou and G. Gasiot and Remy Chevallier and L. Dugoujon and Philippe Roche},
  journal={2014 IEEE Radiation Effects Data Workshop (REDW)},
  year={2014},
  pages={1-8}
}
  • F. Malou, G. Gasiot, +2 authors Philippe Roche
  • Published 2014
  • Engineering
  • 2014 IEEE Radiation Effects Data Workshop (REDW)
  • We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology. 

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