THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]

@inproceedings{Hoffmann2009THzpumpTHzprobeSO,
  title={THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]},
  author={M C Hoffmann and J{\'a}nos Hebling and Harold Y Hwang and K. L. Yeh and Keith A Nelson},
  year={2009}
}
Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free-carrier absorption saturation at temperatures of 300 K and 200 K, respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy, which provides both sub-bandgap excitation and probing, eliminating any direct… CONTINUE READING

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