THz amplification based on impurity-band transitions in Si/GeSi heterostructures

Terahertz stimulated emission based on impurity-band optical transitions of phosphor donor centers embedded in Si/GeSi heterostructures is reported. THz emission was measured from selectively doped Si/GeSi structures excited by CO2 laser radiation. Amplification of 8-9 THz emission with the coefficient of 2-3 cm-1 is obtained for structures with gently… (More)