THE IMPACT OF GaN / SUBSTRATE THERMAL BOUNDARY RESISTANCE ON A HEMT DEVICE

@inproceedings{Nochetto2011THEIO,
  title={THE IMPACT OF GaN / SUBSTRATE THERMAL BOUNDARY RESISTANCE ON A HEMT DEVICE},
  author={Horacio C. Nochetto and Nicholas R. Jankowski and Avram Bar-Cohen},
  year={2011}
}
The present work uses finite element thermal simulations of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) to evaluate the impact of device design parameters on the junction temperature. In particular the effects of substrate thickness, substrate thermal conductivity, GaN thickness, and GaN-to-substrate thermal boundary resistance (TBR) on device temperature rise are quantified. In all cases examined, the TBR was a dominant factor in overall device temperature rise. It is shown… CONTINUE READING

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